• Tarauni YU, Murugapandiyan P, Faragai IA, Galadanchi G, MohanKumar N, Sivasankar KJ, Thiruvadigal JD. Unique Analytical Heat Spreading Model of β-Ga2O3 Buffer Trap Engineered for High Temperature and Frequency Performance of Power AlN/β-Ga2O3 HEMT: Y. Tarauni et al. Journal of Electronic Materials. 2026 May 17:1-6. 

• Devi, K.N., Murugapandiyan, P., Narayana, A.L. et al. Comprehensive Study of Normally-off ScAlN Barrier GaN Transistors on Ultra-wide Bandgap β-Ga2O3: DC and RF Perspectives. Semiconductors 60, 26–41 (2026). https://doi.org/10.1134/S1063782625603449 (SCI) 

• Jiavana, K.F., Bha, J.K., Murugapandiyan, P. et al. Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications. Semiconductors 60, 100–113 (2026). https://doi.org/10.1134/S106378262560353X (SCI)

• S. Tamilselvan, R.Saravana Kumar, P.Murugapandiyan, and L.Arulmurugan, FPGA Implementation of Enhanced Intelligent Signal Processing System for Depression. IET Signal Processing (Wiley-Blackwell). 2025 Dec 1;2025. (SCI, Q3, IF:1.4). 

• Ravi, S., Priya, C., Mohanbabu, A, S. Maheswari, A. Lakshmi Narayana & P. Murugapandiyan, Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs). J Mater Sci (2025). https://doi.org/10.1007/s10853-025-11237-2.  (SCI, Q2, IF: 3.9).  

• C. Arul Murugan, P. Murugapandiyan, C. Sivamani, D. Haripriya, Advancing the frontiers of N-polar GaN HEMT technology: materials, architectures, and applications in RF and power electronics, Materials Science in Semiconductor Processing, Volume 199(2025). https://doi.org/10.1016/j.mssp.2025.109874. (SCI, Q1, IF: 4.6). 

• Nirmala Devi, K., Keerthiga, G., Ravi, S. P.Murugapandiyan, High-performance GaN-based HEMTs with β-Ga2O3 buffer layer engineering for millimeter-wave applications. J. Korean Phys. Soc. (2025). https://doi.org/10.1007/s40042-025-01442-2 (SCI, Q3, IF:0.9). 

• Murugapandiyan P, Maheswari S, Fletcher AA, Saranya G, Anandan P. Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance. Materials Science in Semiconductor Processing. 2025 Jul 1;193:109509. (SCI, Q1 , IF:4.6)

• Revathy A, Thangam R, Haripriya D, Maheswari S, Murugapandiyan P. Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications. Micro and Nanostructures. 2025 Aug 1;204:208169. (SCI, Q2 , IF:3.17) 

• Murugapandiyan P, Fletcher AA, Hasan MT, Ramkumar N, Revathy A. Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics. Microelectronic Engineering. 2025 May 14:112359. (SCI, Q2, IF:2.6)

• Fletcher, A.S.A., Murugapandiyan, P., Mohanbabu, A. et al. Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers. Appl. Phys. A 131, 397 (2025). https://doi.org/10.1007/s00339-025-08512-z (SCI, Q2, IF:2.8)

• Venkatesan, R.S., Savio, M.M.D., Natarajan, R. P. Murugapandiyan. Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics. J. Korean Phys. Soc. 86, 989–1002 (2025). https://doi.org/10.1007/s40042-025-01360-3   (SCI, Q3, IF:0.73)

• Chinnaswamy, S., Palanirajan, G., Vigneshwari, N. P. Murugapandiyan et al. Influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs with a β-Ga2O3 buffer and substrate for RF and power applications. J. Korean Phys. Soc. 86, 678–691 (2025). https://doi.org/10.1007/s40042-025-01318-5 (SCI, Q3, IF:0.73)

• Murugapandiyan, P., Revathy, A., Ramkumar, N. et al. Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. J. Electron. Mater. (2024). https://doi.org/10.1007/s11664-024-11664-y (SCI, Q2 Journal) (IF:2.1) 

• Lino, L., Saravana Kumar, R., Mohanbabu, A. P. Murugapandiyan, Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate. J. Electron. Mater. 53, 5555–5565 (2024). https://doi.org/10.1007/s11664-024-11289-1 (SCI, Q2 Journal) (IF:2.1)

• Murugapandiyan, P., Sri Rama Krishna, K., Revathy, A. et al. Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. J. Electron. Mater. (2024). https://doi.org/10.1007/s11664-024-11005-z (SCI, Q3 Journal) (IF:2.1)

• Ramkumar Natarajan, P. Murugapandiyan, N. Vigneshwari, A. Mohanbabu, Karthikeyan S, S. Ravi, Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications, Micro and Nanostructures, 2024, 207815, https://doi.org/10.1016/j.micrna.2024.207815. (SCI, Q2 Journal) (IF:3.1)

• Fletcher, A.S.A., Franklin, S.A., Murugapandiyan, P. et al. 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars. J. Electron. Mater. 53, 2601–2608 (2024). https://doi.org/10.1007/s11664-024-11014-y (SCI, Q3 Journal) (IF:2.1) 

• A.S.Augustine, D.Nirmal, J.Ayjayam, P.Murugapandiyan, “Is SiC a predominant Technology for Future High power electronics: A critical Review”, Current Nanoscience (SCI Indexed, 2023 IF.2.2). http://dx.doi.org/10.2174/0115734137268803231120111751 (Q3 Journal). 

• Sivamani, C., P. Murugapandiyan, A. Mohanbabu, and Fletcher Augustine. "High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study." Microelectronics Journal (2023): 105946. (IF:3.1). https://doi.org/10.1016/j.mejo.2023.105946.   (SCI, Q2 Journal)

• A. Revathy, J. Vijaya Kumar, P. Murugapandiyan, Mohd Wasim, K. Nirmala Devi, N. Ramkumar, Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications, Micro and Nanostructures, Volume 182, JULY 2023, 207643, https://doi.org/10.1016/j.micrna.2023.207643. (SCI, IF:3.1). (Q2 Journal)

• P. Murugapandiyan, Sri Rama Krishna Kalva, V. Rajyalakshmi, B. Anni Princy, Yusuf U. Tarauni, Augustine Fletcher, Mohd Wasim, A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications, Micro and Nanostructures, 2023, https://doi.org/10.1016/j.micrna.2023.207545. (SCI, IF:3.1).  (Q2 Journal)

• Ramkumar Natarajan, Parthasarathy E, Murugapandiyan P. Ultra-wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications.  International Journal of RF and Microwave Computer-Aided Engineering, 2022; e23360. https://doi.org/10.1002/mmce.23360 . August 2022. (IF:1.97). (SCI, Q2 Journal)

• Tarauni, Y.U., Thiruvadigal, D.J., Hotoro, M. P.Murugapandiyan et al. Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study. J. Electron. Mater. (2022). https://doi.org/10.1007/s11664-022-09767-5. (IF:1.8). (SCI, Q3 Journal)

• Baskaran, S., Shunmugathammal, M., Sivamani, C. P.Murugapandiyan et al. UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications. Silicon (2022). https://doi.org/10.1007/s12633-022-01846-w. (IF:2.67). (SCI, Q2 Journal)

• Natarajan, R., Parthasarathy, E. & Murugapandiyan, P. Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT. Silicon (2022). (SCI Indexed Journal), https://doi.org/10.1007/s12633-022-01746-z, March 2022. (IF:2.67). (SCI, Q2 Journal)

• Fletcher, A.S.A., Nirmal, D., Arivazhagan, L. P.Murugapandiyan et al. A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations. J. Electron. Mater. (2022). https://doi.org/10.1007/s11664-021-09367-9. (IF:1.938) (SCI, Q3 Journal)

• Fletcher, A.S.A., Nirmal, D., Ajayan, L.Arivazhagan, K.Husna Hamza, and P.Murugapandiyan,  60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites. Silicon (2021). https://doi.org/10.1007/s12633-021-01367-y. (IF:2.67). (SCI, Q2 Journal)

• P. Murugapandiyan, D. Nirmal, Md. Tanvir Hasan, Arathy Varghese, J. Ajayan, A.S. Augustine Fletcher, N. Ramkumar, Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study,

Materials Science and Engineering: B, Volume 273, 2021, 115449, ISSN 0921-5107, https://doi.org/10.1016/j.mseb.2021.115449. (IF:4.051) (SCI, Q2 Journal)

• J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A.S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha, Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study, Microelectronics Journal, Volume 114, 2021, https://doi.org/10.1016/j.mejo.2021.105141. (IF:1.605) (SCI, Q2 Journal)

• Murugapandiyan, P., Nirmal, D., Ajayan, J. et al. Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors. Silicon (2021). https://doi.org/10.1007/s12633-020-00899-z. (IF:2.67) (SCI, Q2 Journal)

• P Murugapandiyan ,Md. Tanvir Hasan,V Rajya Lakshmi,Mohd Wasim,J Ajayan,N Ramkumar , Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs, International Journal of Electronics, Published online: 10 Dec 2020. https://doi.org/10.1080/00207217.2020.1849819. (IF:1.336) (SCI, Q3 Journal)

CONFERENCES AND PROCEEDINGS

• P. Murugapandiyan,“High-Performance InAlN/InGaN HEMTs on β-Ga2O3 Substrates for Advanced RF Applications”, 5th International Conference on Micro/Nanoelectronics Devices, Circuits, & System, (Hybrid Mode), 29-31 Jan 2025, Department of Electronics and Communication Engineering, NIT Silchar, India-788010. 

• P. Murugapandiyan, “Lg = 10 nm Gate All Around Si based Nanowire MOSFET for High Performance Computing”, 8th International Conference on Computational Systems & Information Technology for Sustainable Solutions (CSITSS), held from 7ᵗʰ to 9ᵗʰ November, 2024, held at RV college of Engineering, Bangalore. 

• Murugapandiyan P, “Impact of AlGaN Barrier Composition on Enhancement- Mode GaN HEMTs on Ultra-Wide Band Substrate for RF Applications” in the 2024 First International Conference on the Innovations in Communications, Electrical and Computer Engineering (ICICEC 2024) held at Bapuji Institute of Engineering and Technology (BIET), Davangere, Karnataka, India during 24 – 25, October 2024. The conference is technically cosponsored by IEEE Bangalore Section.

• Murugapandiyan P, “Investigation of AlN/GaN HEMT performance for future RF and high voltage switching applications, First International Conference on Advances in Modern Age Technologies for Health and Engineering Science (AMATHE 2024) 16 - 17, May 2024, Shivamogga, Karnataka, India. 

• Murugapandiyan P, “Performance Assessment of Deep learning-models for Kidney Tumor Segmentation using CT Images” at 5th EAI International Conference on Cognitive Computing and Cyber Physical Systems (IC4S 2024) during 5-7 April 2024 organized by Vishnu Institute of Technology.  

• L. L, S. K. R, Murugapandiyan P and L. M. M, "Optimizing Back Barrier Material Composition and Thickness of Al0.15Ga0.85N/GaN/AlxGa1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications," 2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE), Vellore, India, 2024, pp. 1-6, doi: 10.1109/ic-ETITE58242.2024.10493795. 

• R. Natarajan, E. Parthasarathy and P. Murugapandiyan, “High-Performance In0.13Al0.83Ga0.04N/AlN/GaN/In0.04Ga0.96N HEMT for High Power Millimeter Wave Electronics” 2021 IEEE Madras Section Conference (MASCON), 2021, pp. 1-5, doi: 10.1109/MASCON51689.2021.9563373.

• P. Murugapandiyan, Influence of passivation engineering on operational characteristics of gate field plate AlGaN/GaN HEMTs, word Nano congress on Advanced Science and Technology, (WNCST-2021), centre for Nanotechnology research, March 2021, VIT, India. 

• P. Murugapandiyan, International Conference on Nonoscience and Nanotechnology (ICONN 2021), SRM IST, Chennai. ISBN: 13-978-93-90614-46-2, Page no: 1224. 

• N. Ramkumar P. Eswaran P. Murugapandiyan MOHD Wasim, Al0.3Ga0.7N/In0.1Ga0.9N/GaN/Al0.04Ga0.96N high-performance nano-scale high electron mobility transistor for wideband microwave applications, International Conference on Nonoscience and Nanotechnology (ICONN 2021), SRM IST, Chennai. ISBN: 13-978-93-90614-46-2, Page no: 1224. 

• Revathy, C.S. Boopathy, P. Murugapandiyan, Composite channel based AlGaN/InGaN/GaN and InAlN/InGaN/GaN based HEMTs for high-power wide bandwidth millimeter-wave applications International Conference on Nonoscience and Nanotechnology (ICONN 2021), SRM IST, Chennai. ISBN: 13-978-93-90614-46-2, Page no: 1222. 

• P. Murugapandiyan, N. Ramkumar, MOHD Wasim, V. Rajyalakshmi, " High-k passivation Gate Field Plate Al0.295Ga0.705N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors", 2nd International Conference on Multidisciplinary Innovation in Academic Research Chennai, India, 18th March 2021. ISBN No: 978-93-90214-14-3. Organized by: Institute for Engineering Research and Publication (IFERP). 

• P. Murugapandiyan, N. Ramkumar, MOHD Wasim, V. Rajyalakshmi Performance analysis for SiN passivation Gate Field Plate Al0.295Ga0.705N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors for High Power Microwave Applications, 2nd International Conference on Technological Innovations in Engineering and Management (ICTIEM-21), 30th-31st March, 2021 - Visakhapatnam, IFERP - ICTIEM-21 - Visakhapatnam ISBN: 978-93-90214-17-4. 

BOOK CHAPTERS

• G Saranya, G Indhumathi, A. Prasanth, P. Murugapandiyan, “Book chapter: Advanced Technologies for Federated Learning in Smart Cities and Its Use Cases, Book: Applications of Federated Learning in Technological Advancements, 1st Edition, June 2025, Chapman and Hall/CRC, Pages15, eBook SBN-9781003532323. DOI: 10.1201/9781003532323-8

• Mohanbabu, N. S. Maheswari, Vinodhkumar. S, P. Murugapandiyan, “Advancement in GaN Technologies: Power, RF, Digital and Quantum applications”, July 2024, https://doi.org/10.2174/97898152382421240101.

• Mohanbabu, N. Vinodhkumar, S. Maheswari, S. Baskaran, V. Janakiraman, M. Saravanan, P. Murugapandiyan, “E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications”, October 2023, https://doi.org/10.1002/9781394186396.ch7. 

• Murugapandiyan P., Lakshmi V.R., Ramkumar N., Eswaran P., Wasim M. (2020) GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review. In: Saini H.S., Singh R.K., Tariq Beg M., Sahambi J.S. (eds) Innovations in Electronics and Communication Engineering. Lecture Notes in Networks and Systems, vol 107. Springer, Singapore. https://doi.org/10.1007/978-981-15-3172-9_33. page no:339 to 348, ISBN:9789811531729, 9811531722. 

• Murugapandiyan, P., Ramkumar, N., Ravi, S. (2023). Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0 1.

PATENT PUBLISHED 

• MEASUREMENT OF COASTAL TOPOGRAPHY, published on 16-05-2025, Indian Patent.

• UNDER WATER ASSET INSPECTION DRONE, published on 16-05-2025, Indian Patent.

• Enhanced Rehabilitation systems for hand injury patients, published on 26-04-2024, Indian Patent.

• Medical surveillances Robotic vehicle for isolation ward, published on 26-04-2024, Indian Patent.

• System for artificial intelligence-based transceiving signal in 6G wireless communication network, published on 31-03-2023, Indian Patent.

• Minimally invasive alarm therapy device for inhibiting digit-sucking habit, published on 08-09-2023, Indian Patent.

• IoT based smart water surveillance systems, published on 26-05-2023, Indian Patent.

• Health monitoring and alerting smart wheelchair for physically disabled, published on 05-05-2023, Indian Patent.

• Integrated intelligent saline stand, published on 26-05-2023, Indian Patent. 

• Received Rs 1,00,000/- grant from AICTE for organizing Six Days online faculty development programme on sustainable semiconductor technologies: Designing energy efficient devices for Green Electronics under AICTE training and Learning programme for the financial year 2025-2026, dated 18-09-2025.    

• Principal investigator for Chips to Start-up (C2S) programme. Established Centre of Excellence in chip design sponsored by Ministry of Electronics and Information Technology (MeitY) - Government of India, at ANITS. 

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Total Years of Academic Experience:  17+ Years

• Professor, Department of ECE, SRM Institute of Science and Technology, Tiruchirappalli, Tamil Nadu (May 2026 to Till Date)
• Professor, Department of ECE, Anil Neerukonda Institute of Technology & Sciences (A), Visakhapatnam, Andhra Pradesh (Jan 2024 to Apr 2026)
• Associate Professor, Department of ECE, Anil Neerukonda Institute of Technology & Sciences (A), Visakhapatnam, Andhra Pradesh (Nov 2018 to Dec 2023)
• Assistant Professor, Department of ECE, Agnel Institute of Technology and Design, Goa (May 2015 to Nov 2018)
• Assistant Professor / Associate Professor, Department of ECE, MAM College of Engineering, Tiruchirappalli, Tamil Nadu (May 2011 to May 2015)
• Lecturer, Department of ECE, MIET Engineering College, Tiruchirappalli, Tamil Nadu (Dec 2008 to Apr 2011)

• IEEE (IEEE Membership No: 95296662)

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